▎ 摘　　要

The enhancement of the second flexural mode in a monolayer graphene resonator by an inhomogeneous electrostatic actuation force has been observed. The devices have been fabricated by transferring the graphene onto a poly-Si/SiO2/Si substrate whereby the poly-Si has been released to produce graphene resonators. Enhancement of the second harmonic has been demonstrated by varying the actuation voltage, achieving an amplitude enhancement of up to 95% of the fundamental mode. The reported findings open new perspectives for graphene resonant sensors with enhanced sensitivity.