• 文献标题:   Direct observation of charge transfer region at interfaces in graphene devices
  • 文献类型:   Article
  • 作  者:   NAGAMURA N, HORIBA K, TOYODA S, KUROSUMI S, SHINOHARA T, OSHIMA M, FUKIDOME H, SUEMITSU M, NAGASHIO K, TORIUMI A
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Tohoku Univ
  • 被引频次:   21
  • DOI:   10.1063/1.4808083
  • 出版年:   2013

▎ 摘  要

Nanoscale spectromicroscopic characterizing technique is indispensable for realization of future high-speed graphene transistors. Highly spatially resolved soft X-ray photoelectron microscopy measurements have been performed using our "3D nano-ESCA" (three-dimensional nanoscale electron spectroscopy for chemical analysis) equipment in order to investigate the local electronic states at interfaces in a graphene device structure. We have succeeded in detecting a charge transfer region at the graphene/metal-electrode interface, which extends over similar to 500 nm with the energy difference of 60meV. Moreover, a nondestructive depth profiling reveals the chemical properties of the graphene/SiO2-substrate interface. (C) 2013 AIP Publishing LLC.