▎ 摘　　要

We report a self-powered photodetector based on the graphene/GaAs nanowire Schottky junctions. The device is fabricated by transferring a monolayer graphene onto an n-doped GaAs nanowire array. The nanowires are grown by Au-catalyzed metal organic chemical vapor deposition, and the Au particles are subsequently removed by wet etching to achieve close contact between graphene and GaAs. The device exhibits a responsivity of 1.54 mA/W at zero bias and a short response/recover time of 71/194 ls at room temperature, showing a strong possibility for high-speed near-infrared applications. Published by AIP Publishing.