• 文献标题:   Assembly Process and Electrical Properties of Top-Transferred Graphene on Carbon Nanotubes for Carbon-Based 3-D Interconnects
  • 文献类型:   Article
  • 作  者:   ZHU Y, TAN CW, CHUA SL, LIM YD, VAISBAND B, TAY BK, FRIEDMAN EG, TAN CS
  • 作者关键词:   graphene, gold, resistance, substrate, silicon, electrical resistance measurement, scanning electron microscopy, carbon nanotube cnt, graphene, threedimensional 3d interconnect
  • 出版物名称:   IEEE TRANSACTIONS ON COMPONENTS PACKAGING MANUFACTURING TECHNOLOGY
  • ISSN:   2156-3950 EI 2156-3985
  • 通讯作者地址:   Nanyang Technol Univ
  • 被引频次:   2
  • DOI:   10.1109/TCPMT.2019.2940511
  • 出版年:   2020

▎ 摘  要

Carbon nanomaterials, graphene, and carbon nanotubes (CNTs) have emerged as promising materials for the integration of future advance packaging technologies. The main benefits of carbon nanomaterials include excellent electrical, thermal, and mechanical properties. In this article, the transfer process of a top graphene layer onto the as-grown CNT bundles was successfully performed with direct graphene-to-CNT contact at the interface. Four-point-probe (4PP) I-V characterization suggests that an ohmic contact was achieved between the graphene and CNTs. Low CNT bump resistance of 2.1 Omega for 90 000 mu m CNT area including the CNT-graphene contact resistance was obtained, demonstrating a reduction in the contact resistance between the CNT and Au under the same fabrication and measurement conditions. This work presents the preliminary results for the assembly process of top-transferred graphene on the CNTs and the electrical properties of direct CNT-graphene contact, paving the way for the implementation of full-carbon-based three-dimensional (3-D) interconnects.