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  • 文献标题:   Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics
  • 文献类型:   Article
  • 作　　者:   YAMAGUCHI H, OGAWA S, WATANABE D, HOZUMI H, GAO YQ, EDA G, MATTEVI C, FUJITA T, YOSHIGOE A, ISHIZUKA S, ADAMSKA L, YAMADA T, DATTELBAUM AM, GUPTA G, DOORN SK, VELIZHANIN KA, TERAOKA Y, CHEN MW, HTOON H, CHHOWALLA M, MOHITE AD, TAKAKUWA Y
  • 作者关键词:   fermi level, graphene oxide, optoelectronic, ultraviolet photoelectron spectroscopy, valenceband electronic structure
  • 出版物名称:   PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE
  • ISSN:   1862-6300 EI 1862-6319
  • 通讯作者地址:   Los Alamos Natl Lab
  • 被引频次:   8
  • DOI:   10.1002/pssa.201532855
  • 出版年:   2016

▎ 摘　　要

We report valence-band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. The degree of oxygen functionalization was controlled by annealing temperature, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in the density of states around the Fermi level upon thermal annealing at similar to 600 degrees C. The result indicates that while there is an apparent bandgap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of bandgap closure was correlated with the electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of similar to 500 degrees C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to an as-synthesized counterpart. [GRAPHICS] (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim