▎ 摘　　要

Graphene-ZnO: N Schottky junction barristors are fabricated on a flexible polyethylene naphthalate substrate utilizing a low thermal budget integration process with a maximum process temperature below 200 degrees C. An on/off ratio of over 10(4) is obtained with a 0.1 A/cm(2) drive current density at V-d = 0.5 V. The transmittance, degraded by the device stack, was 2.5-3% in the visible wavelength range, and a high on/off ratio was maintained after 600 bending cycles at a 0.6% strain (bending radius = 10 mm). (c) 2018 Author(s).