▎ 摘　　要

Improvement of the removal efficiency of the upper (directed towards the n-side) heat flux from high-power laser diodes is proposed by providing the graphene-oxide (GO) deposit from the top of the p-down-mounted chips. Resulting decrease of the device's thermal resistance has been found in reduced red shift of the spectral characteristics connected with the drive current increase (compared with no GO deposit' device). Providing GO in the form of aqueous suspension and then drying at room temperature is relatively easy and repeatable. Experimental step-by-step processing and characterisations indicate dominant heat removal from the chip's side walls rather than from its n-contact surface.