▎ 摘　　要

We study the valley-dependent electron transport properties in a graphene under the joint modulation of the magnetic field and the strained barrier. In studying, the effect of the magnetic field on the valley-dependent electron conductance and the valley polarization is considered. From the numerical results, we deduce that a large valley polarization nearly 100% can be obtained in such a magnetic-strained graphene, and the polarization is mainly governed by the strength and the position of the right magnetic field. Moreover, the distance between the right magnetic field and the strained barrier plays an important effect on the valley polarization. These interesting-theoretical finds can promote the realization of the new types of the magnetic field-tunable valleytronic devices.