• 文献标题:   Key growth parameters affecting the domain structure of chemical vapor deposition (CVD)-grown graphene on nickel
  • 文献类型:   Article
  • 作  者:   KIM SJ, KIM DW, JUNG HT
  • 作者关键词:  
  • 出版物名称:   RSC ADVANCES
  • ISSN:   2046-2069
  • 通讯作者地址:   Korea Adv Inst Sci Technol
  • 被引频次:   12
  • DOI:   10.1039/c3ra44751k
  • 出版年:   2013

▎ 摘  要

The domain structures of multilayer graphene grown on Ni using a chemical vapor deposition (CVD) processwere characterized using an optical birefringence visualization method. Unlike graphene grown on Cu, the Ni surface topography, rather than the Ni crystal orientation, significantly influenced the graphene domain size and structure. Smoother surfaces yielded larger domains. The graphene domains in the inner layers closer to the substrate in multilayer graphene were smaller than the outer layers on the top surface.