▎ 摘　　要

We analyze the response of lateral n(+)-i-n-n(+) graphene field-effect transistors (GFETs) to terahertz (THz) radiation. The nonlinearity due to the Coulomb drag of quasi-equilibrium carriers by injected ballistic carriers accompanied by plasmonic oscillations in a GFET channel enables a resonantly strong response. This effect can be used for effective resonant detection of THz radiation. Published under an exclusive license by AIP Publishing.