• 文献标题:   Chern insulators, van Hove singularities and topological flat bands in magic-angle twisted bilayer graphene
  • 文献类型:   Article
  • 作  者:   WU S, ZHANG ZY, WATANABE K, TANIGUCHI T, ANDREI EY
  • 作者关键词:  
  • 出版物名称:   NATURE MATERIALS
  • ISSN:   1476-1122 EI 1476-4660
  • 通讯作者地址:  
  • 被引频次:   131
  • DOI:   10.1038/s41563-020-00911-2 EA FEB 2021
  • 出版年:   2021

▎ 摘  要

Magic-angle twisted bilayer graphene exhibits intriguing quantum phase transitions triggered by enhanced electron-electron interactions when its flat bands are partially filled. However, the phases themselves and their connection to the putative non-trivial topology of the flat bands are largely unexplored. Here we report transport measurements revealing a succession of doping-induced Lifshitz transitions that are accompanied by van Hove singularities, which facilitate the emergence of correlation-induced gaps and topologically non-trivial subbands. In the presence of a magnetic field, well-quantized Hall plateaus at a filling of 1,2,3 carriers per moire cell reveal the subband topology and signal the emergence of Chern insulators with Chern numbers, C = 3,2,1, respectively. Surprisingly, for magnetic fields exceeding 5 T we observe a van Hove singularity at a filling of 3.5, suggesting the possibility of a fractional Chern insulator. This van Hove singularity is accompanied by a crossover from low-temperature metallic, to high-temperature insulating behaviour, characteristic of entropically driven Pomeranchuk-like transitions.