▎ 摘　　要

Gated trilayer graphene shows an energy gap and three topologically protected gapless states when the stacking order changes from ABC to CBA. Here we investigate such a trilayer, but with a part of the internal layer cut and removed forming a region in trilayer built of only two not connected single graphene layers. We demonstrate that the electronic structure of this region is almost the same as that of the gated trilayer. Curiously, the topological gapless states that appear due to differences in the stacking order of the adjacent trilayers localise mostly in these single graphene layers. Thus, a strong disorder in the internal layer of gated trilayer graphene does not lead to the destruction of its fundamental electronic properties.