• 文献标题:   Effect of configuration and biaxial strain to electronic structure of half-fluorinated graphene
  • 文献类型:   Article
  • 作  者:   YU WZ, GAO SP
  • 作者关键词:   graphene, fluorine, dft, gw method, band gap, strain
  • 出版物名称:   SURFACE SCIENCE
  • ISSN:   0039-6028 EI 1879-2758
  • 通讯作者地址:   Fudan Univ
  • 被引频次:   7
  • DOI:   10.1016/j.susc.2014.12.013
  • 出版年:   2015

▎ 摘  要

Mechanical stability and equilibrium structure of half-fluorinated graphene with different configurations of fluorine atoms on the surface of graphene are investigated by density functional theory (OFT). Phonon density of states reveals that the half-fluorinated graphene with chair, boat, zigzag, chair*, and boat* structures are stable. Band structures of the half-fluorinated graphene are calculated by DFT with generalized gradient approximation. Band gaps are corrected by the GW method. Half-fluorinated graphene with chair, zigzag, and chair* structures are metallic. Half-fluorinated graphene with chair structure is spin-polarized. Half-fluorinated graphene with boat and boat* structures are indirect band gap semiconductors and the GW band gaps of them are 5.147 eV and 5.648 eV respectively. Structural and electronic properties of half-fluorinated graphene under a series of biaxial strain are studied. A tensile strain larger than 6% can open an indirect band gap for half-fluorinated graphene with chair structure. Band gap type of half-fluorinated graphene with boat* structure undergoes an indirect-to-direct transition under compressive strain. (C) 2014 Elsevier B.V. All rights reserved.