▎ 摘　　要

We explore the effect of high-kappa dielectric seed layer and overlayer on carrier transport in epitaxial graphene. We introduce a novel seeding technique for depositing dielectrics by atomic layer deposition that utilizes direct deposition of high-kappa seed layers and can lead to an increase in Hall mobility up to 70% from as-grown. Additionally, high-kappa seeded dielectrics are shown to produce superior transistor performance relative to low-kappa seeded dielectrics and the presence of heterogeneous seed/overlayer structures is found to be detrimental to transistor performance, reducing effective mobility by 30-40%. The direct deposition of high-purity oxide seed represents the first robust method for the deposition of uniform atomic layer deposited dielectrics on epitaxial graphene that improves carrier transport.