▎ 摘　　要

An e-beam exposure can be applied to charging of dielectrics. In SiO2 this phenomenon is investigated fundamentally, but nobody use the charged dielectric layer as substrate for controllable CVD. In the present work it is shown that the growth of graphene-like films (transparent conductive continuous films which possess a high value from applied viewpoint) can be controlled by e-beam irradiating the substrate surface with various exposure doses. The quality and the thickness of GLF on SiO2/Si increase together with preliminary exposure dose. The mechanism of the observed effect is discussed. Quasi-3D structures with different thicknesses of GLFs are grown during a single synthesis. (C) 2018 Elsevier B.V. All rights reserved.