• 文献标题:   Copper vapor-assisted growth of hexagonal graphene domains on silica islands
  • 文献类型:   Article
  • 作  者:   LI J, SHEN CM, QUE YD, TIAN Y, JIANG LL, BAO DL, WANG YL, DU SX, GAO HJ
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   3
  • DOI:   10.1063/1.4958872
  • 出版年:   2016

▎ 摘  要

Silica (SiO2) islands with a dendritic structure were prepared on polycrystalline copper foil, using silane (SiH4) as a precursor, by annealing at high temperature. Assisted by copper vapor from bare sections of the foil, single-layer hexagonal graphene domains were grown directly on the SiO2 islands by chemical vapor deposition. Scanning electron microscopy, atomic force microscopy, Raman spectra, and X-ray photoelectron spectroscopy confirm that hexagonal graphene domains, each measuring several microns, were synthesized on the silica islands. Published by AIP Publishing.