• 文献标题:   Stable p- and n-type doping of few-layer graphene/graphite
  • 文献类型:   Article
  • 作  者:   MENG XQ, TONGAY S, KANG J, CHEN ZH, WU FM, LI SS, XIA JB, LI JB, WU JQ
  • 作者关键词:  
  • 出版物名称:   CARBON
  • ISSN:   0008-6223 EI 1873-3891
  • 通讯作者地址:   Zhejiang Normal Univ
  • 被引频次:   22
  • DOI:   10.1016/j.carbon.2013.02.028
  • 出版年:   2013

▎ 摘  要

ZnMg and NbCl5 were intercalated in graphite and the presence of such molecules between the graphene sheets results in n- and p-type doping, respectively. The doping effect is confirmed by Hall and Raman measurements and the intercalation process is monitored by scanning tunneling microscopy. After intercalation the carrier concentration increase almost an order of magnitude and reaches values as high as 10(19)and 10(18) cm(-3) for p- and n-type doping, respectively. For higher intercalation times, the intercalated graphite turns back to be as ordered as pristine one as evidenced by the reduction in the D peak in Raman measurements. Intercalation compounds show remarkable stability allowing us to permanently tune the physical properties of few-layer graphite. Our study has provided a new route to produce stable and functional graphite intercalation compounds and the results can be applied to other graphitic structures such as few-layer graphene on SiC. (C) 2013 Elsevier Ltd. All rights reserved.