• 文献标题:   Can silicon behave like graphene? A first-principles study
  • 文献类型:   Article
  • 作  者:   HOUSSA M, POURTOIS G, AFANAS EV VV, STESMANS A
  • 作者关键词:   ab initio calculation, adsorption, elemental semiconductor, silicon
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Katholieke Univ Leuven
  • 被引频次:   168
  • DOI:   10.1063/1.3489937
  • 出版年:   2010

▎ 摘  要

The electronic properties of two-dimensional hexagonal silicon (silicene) are investigated using first-principles simulations. Though silicene is predicted to be a gapless semiconductor, due to the sp(2)-hybridization of its atomic orbitals, the weak overlapping between 3p(z) orbitals of neighbor Si atoms leads to a very reactive surface, resulting in a more energetically stable semiconducting surface upon the adsorption of foreign chemical species. It is predicted that silicene inserted into a graphitelike lattice, like ultrathin AlN stacks, preserves its sp(2)-hydridization, and hence its graphenelike electronic properties. (c) 2010 American Institute of Physics. [doi:10.1063/1.3489937]