▎ 摘　　要

Memristors have emerged as promising devices for neuromorphic applications, particularly as synaptic weight. Graphene oxide, a partially oxidised and electrically insulating form of graphene, has been employed in metal/insulator/metal devices, where resistance switching based on the filamentary growth of the contacting metals has been demonstrated. Here we demonstrate an alternative highly reproducible resistance switching mechanism based on solid-state reduction of GO thin-films mediated by adsorbed water. It is shown that distinguishable and highly stable resistance states can be controllably realised in graphene oxide metal/insulator/metal devices. We have unravelled the growth mechanism and determined the growth kinetic of reduced graphene oxide, which enables a deterministic way to tune the resistance in GO devices. The demonstration of highly reproducible memristors based on graphene oxide crossbar devices is very promising for the realisation of low-cost and environmentally benign solution-processable neuromorphic synaptic weight.