• 文献标题:   Graphene memristors based on humidity-mediated reduction of graphene oxide
  • 文献类型:   Article
  • 作  者:   GORGABI FH, MORANTMINANA MC, ZAFARKISH H, ABBASZADEH D, ASADI K
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF MATERIALS CHEMISTRY C
  • ISSN:   2050-7526 EI 2050-7534
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1039/d2tc04632f EA JAN 2023
  • 出版年:   2023

▎ 摘  要

Memristors have emerged as promising devices for neuromorphic applications, particularly as synaptic weight. Graphene oxide, a partially oxidised and electrically insulating form of graphene, has been employed in metal/insulator/metal devices, where resistance switching based on the filamentary growth of the contacting metals has been demonstrated. Here we demonstrate an alternative highly reproducible resistance switching mechanism based on solid-state reduction of GO thin-films mediated by adsorbed water. It is shown that distinguishable and highly stable resistance states can be controllably realised in graphene oxide metal/insulator/metal devices. We have unravelled the growth mechanism and determined the growth kinetic of reduced graphene oxide, which enables a deterministic way to tune the resistance in GO devices. The demonstration of highly reproducible memristors based on graphene oxide crossbar devices is very promising for the realisation of low-cost and environmentally benign solution-processable neuromorphic synaptic weight.