▎ 摘　　要

We have analyzed by using scanning tunneling microscopy (STM) thin films made of few (three to five) graphene layers grown on the C terminated face of 6H-SiC in order to identify the nature of the azimuthal disorder reported in this material. We observe superstructures which are interpreted as Moire patterns due to a misorientation angle between consecutive layers. The presence of stacking faults is expected to lead to electronic properties reminiscent of single layer graphene even for multilayer samples. Our results indicate that this apparent electronic decoupling of the layers can show up in STM data.