• 文献标题:   Coexistence of electron and hole transport in graphene
  • 文献类型:   Article
  • 作  者:   WIEDMANN S, VAN ELFEREN HJ, KURGANOVA EV, KATSNELSON MI, GIESBERS AJM, VELIGURA A, VAN WEES BJ, GORBACHEV RV, NOVOSELOV KS, MAAN JC, ZEITLER U
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Radboud Univ Nijmegen
  • 被引频次:   18
  • DOI:   10.1103/PhysRevB.84.115314
  • 出版年:   2011

▎ 摘  要

When sweeping the carrier concentration in monolayer graphene through the charge neutrality point, the experimentally measured Hall resistivity shows a smooth zero crossing. Using a two-component model of coexisting electrons and holes around the charge neutrality point, we unambiguously show that both types of carriers are simultaneously present. For high magnetic fields up to 30 T the electron and hole concentrations at the charge neutrality point increase with the degeneracy of the zero-energy Landau level, which implies a quantum Hall metal state at nu = 0 made up by both electrons and holes.