• 文献标题:   Effects of multi-layer graphene capping on Cu interconnects
  • 文献类型:   Article
  • 作  者:   KANG CG, LIM SK, LEE S, LEE SK, CHO C, LEE YG, HWANG HJ, KIM Y, CHOI HJ, CHOE SH, HAM MH, LEE BH
  • 作者关键词:  
  • 出版物名称:   NANOTECHNOLOGY
  • ISSN:   0957-4484 EI 1361-6528
  • 通讯作者地址:   Gwangju Inst Sci Technol
  • 被引频次:   31
  • DOI:   10.1088/0957-4484/24/11/115707
  • 出版年:   2013

▎ 摘  要

The benefits of multi-layer graphene (MLG) capping on Cu interconnects have been experimentally demonstrated. The resistance of MLG capped Cu wires improved by 2-7% compared to Cu wires. The breakdown current density increased by 18%, suggesting that the MLG can act as an excellent capping material for Cu interconnects, improving the reliability characteristics. With a proper process optimization, MLG capped Cu interconnects could become a promising technology for high density back end-of-line interconnects.