▎ 摘　　要

A facile and damage-free patterning process was proposed to solve the incompatibility in the traditional photolithography process by introducing graphene oxide (GO) as a protective layer for poly (3,4-ethylenedioxythiophene): polystyrene (PEDOT:PSS) film. As a result, a high-resolution GO/PEDOT:PSS electrode array with a feature size down to 3 mu m was fabricated. Moreover, the PEDOT:PSS films exhibit average optical transparency up to 92.6% in the visible light range, excellent conductivity (similar to 2000 S cm(-1)), and high conformability. Based on the GO/PEDOT:PSS electrode array, the conformal organic field-effect transistors with the highest mobility of up to 1.4 cm(2) V-1 s(-1) and average mobility of 0.83 cm(2) V-1 s(-1) by layer-by-layer lamination were successfully fabricated. Our process was highly compatible with traditional photolithographic patterning techniques, which may provide a route for the integration of complex soft electronics.