▎ 摘　　要

Reconfigurable field-effect transistors have attracted enormous attention over the past decades because of their potential in implementing logic and analog circuit functions with fewer resources of transistors compared with complementary metal-oxide-semiconductor transistors. However, the miniaturization of traditional reconfigurable transistors is still a challenge owing to their inherent planar multi-gate structure. Herein, we fabricated a dual-gate vertical transistor based on graphene/MoTe2/graphite van der Waals heterostructure and demonstrated a switchable n-type, V-shape ambipolar and p-type field-effect characteristics by varying the voltages of the top gate and drain electrodes. According to the band diagram analysis, we reveal that the reconfiguring ability of the field-effect characteristics stems from the asymmetric injection efficiency of the carriers through the gate-tunable barriers at the interfaces. Our results offer a potential approach to achieve device miniaturization of reconfigurable transistors.