• 文献标题:   Enhancement of Mobility and Modulation of Carrier Concentration in Graphene Field-Effect Transistors via Molecular Doping
  • 文献类型:   Article
  • 作  者:   XU L, NI IC, CHAO YP, JIANG TJ, CHEN MH, WU CI
  • 作者关键词:   amine group, carrier concentration, electron mobility, graphene, hole mobility, hydroxyl group
  • 出版物名称:   ADVANCED MATERIALS INTERFACES
  • ISSN:   2196-7350
  • 通讯作者地址:  
  • 被引频次:   2
  • DOI:   10.1002/admi.202100748 EA SEP 2021
  • 出版年:   2021

▎ 摘  要

This study demonstrates a molecular doping method by physical vapor molecule adsorption using several functional group compounds. Among these dopants, the amine groups include o-phenylene diamine (OPD), diethylenetriamine (DETA), and tetraethylenepentamine (TEPA); the hydroxyl groups include phenol, catechol, and tetraglycol. A positive correlation between the doping level and the number of functional groups is confirmed in this study. Additionally, it is found that the spatial structure of the dopant molecule is another determinant factor affecting the doping degree and mobility. Thus, the planar dopants with an aromatic ring can be easily rearranged to maximize the interaction with graphene, resulting in a stronger p-doping effect. The work function of graphene is efficiently tuned from 4.3 to 3.83 eV for TEPA-doped graphene and to 4.73 eV for catechol-doped graphene. Molecules with alkyl chains (DETA and tetraglycol) act as compensators that partially neutralize the randomly charged impurity centers in the substrate, increasing the graphene electron mobility from 3068 to 9700 cm(2) V-1 s(-1) and the hole mobility from 3161 to 3650 cm(2) V-1 s(-1) compared with that of pristine graphene.