▎ 摘　　要

Strain, both naturally occurring and deliberately engineered, can have a considerable effect on the structural and electronic properties of 2D and layered materials. Uniaxial or biaxial heterostrain modifies the stacking arrangement of bilayer graphene (BLG) which subsequently influences the electronic structure of the bilayer. Here, we use density functional theory (DFT) calculations to investigate the interplay between an external applied heterostrain and the resulting stacking in BLG. We determine how a strain applied to one layer is transferred to a second, 'free' layer and at what critical strain the ground-state AB-stacking is disrupted. To overcome limitations introduced by periodic boundary conditions, we consider an approximate system consisting of an infinite graphene sheet and an armchair graphene nanoribbon. We find that above a critical strain of similar to 1%