▎ 摘　　要

We investigate the effect of excess hydrogen adsorption on plasmon excitation in nanostructured graphene with in-plane (IP) and out-of-plane (OP) hydrogen passivation. On the basis of the results for the considered geometric structures of (hexagonal, triangular, and rectangular) nanographene, we observe that OP passivation even with a single hydrogen atom can have an obvious impact on plasmon excitation. The plasmon excitation intensity in the high energy region (similar to 5.0 eV) is greatly weakened after hydrogen adsorption in both edge and center OP passivation, and peak splitting occurs in hexagonal and rectangular nanographene. Analysis of the induced charge density distribution at the corresponding plasmon peaks shows that OP passivation, caused by a single hydrogen atom, will also greatly affect the distribution of hot carriers and plasmon-induced electric near-field. Additionally, we note that this phenomenon is still observable for bulk plasmon even for hexagonal nanographene with a size of 2.0 nm.