• 文献标题:   Bilayered semiconductor graphene nanostructures with periodically arranged hexagonal holes
  • 文献类型:   Article
  • 作  者:   KVASHNIN DG, VANCSO P, ANTIPINA LY, MARK GI, BIRO LP, SOROKIN PB, CHERNOZATONSKII LA
  • 作者关键词:   gaphene, antidot, electronic propertie, dft
  • 出版物名称:   NANO RESEARCH
  • ISSN:   1998-0124 EI 1998-0000
  • 通讯作者地址:   Emanuel Inst Biochem Phys
  • 被引频次:   12
  • DOI:   10.1007/s12274-014-0611-z
  • 出版年:   2015

▎ 摘  要

We present a theoretical study of new nanostructures based on bilayered graphene with periodically arranged hexagonal holes (bilayered graphene antidots). Our ab initio calculations show that fabrication of hexagonal holes in bigraphene leads to connection of the neighboring edges of the two graphene layers with formation of a hollow carbon nanostructure sheet which displays a wide range of electronic properties (from semiconductor to metallic), depending on the size of the holes and the distance between them. The results were additionally supported by wave packet dynamical transport calculations based on the numerical solution of the time-dependent Schrodinger equation.