• 文献标题:   Proximity-induced giant spin-orbit interaction in epitaxial graphene on a topological insulator
  • 文献类型:   Article
  • 作  者:   JIN KH, JHI SH
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Pohang Univ Sci Technol
  • 被引频次:   74
  • DOI:   10.1103/PhysRevB.87.075442
  • 出版年:   2013

▎ 摘  要

Heterostructures of Dirac materials such as graphene and topological insulators provide interesting platforms to explore exotic quantum states of electrons in solids. Here we study the electronic structure of the graphene-Sb2Te3 heterostructure using density functional theory and tight-binding methods. We show that the epitaxial graphene on Sb2Te3 turns into the quantum spin-Hall phase due to its proximity to the topological-insulating Sb2Te3. It is found that the epitaxial graphene develops a giant spin-orbit gap of about similar to 20 meV, which is about three orders of magnitude larger than that of pristine graphene. We discuss the origin of such enhancement of the spin-orbit interaction and possible outcomes of the spin-Hall phase in graphene. DOI: 10.1103/PhysRevB.87.075442