• 文献标题:   Upstream modes and antidots poison graphene quantum Hall effect
  • 文献类型:   Article
  • 作  者:   MOREAU N, BRUN B, SOMANCHI S, WATANABE K, TANIGUCHI T, STAMPFER C, HACKENS B
  • 作者关键词:  
  • 出版物名称:   NATURE COMMUNICATIONS
  • ISSN:   2041-1723
  • 通讯作者地址:  
  • 被引频次:   9
  • DOI:   10.1038/s41467-021-24481-2
  • 出版年:   2021

▎ 摘  要

The quantum Hall effect is the seminal example of topological protection, as charge carriers are transmitted through one-dimensional edge channels where backscattering is prohibited. Graphene has made its marks as an exceptional platform to reveal new facets of this remarkable property. However, in conventional Hall bar geometries, topological protection of graphene edge channels is found regrettably less robust than in high mobility semi-conductors. Here, we explore graphene quantum Hall regime at the local scale, using a scanning gate microscope. We reveal the detrimental influence of antidots along the graphene edges, mediating backscattering towards upstream edge channels, hence triggering topological breakdown. Combined with simulations, our experimental results provide further insights into graphene quantum Hall channels vulnerability. In turn, this may ease future developments towards precise manipulation of topologically protected edge channels hosted in various types of two-dimensional crystals. It was suggested that the breakdown of the quantum Hall effect in graphene originates from the coupling between counter propagating edge modes. Here, by using scanning gate microscopy, the authors propose a microscopic mechanism of this coupling due to antidots present at graphene edges.