▎ 摘　　要

A model of carrier density and drain current for monolayer graphene field-effect transistors (GFET) is proposed in this paper. In general, the carrier density is the numerical integration of the density of states (DOS) and Fermi-Dirac distribution. To avoid numerical solution, a physical-based and analytical calculation for carrier density and quantum capacitance is presented. Due to the intrinsic physical mechanism, the interface trap density is taken into account in the drain current model of GFET. Through the comparisons between model results and numerical iterations or experimental data, the validity of the proposed models is supported. The clear physical conception and simplicity of algorithm make our scheme suitable for compact modelling. (C) 2019 Author(s).