▎ 摘　　要

We report a method that uses van der Waals interactions to transfer continuous, high-quality graphene films from Ge(110) to a different substrate held by hexagonal boron nitride carriers in a clean, dry environment. The transferred films are uniform and continuous with low defect density and few charge puddles. The transfer is effective because of the weak interfacial adhesion energy between graphene and Ge. Based on the minimum strain energy required for the isolation of film, the upper limit of the interfacial adhesion energy is estimated to be 23 meV per carbon atom, which makes graphene/Ge(110) the first as-grown graphene film that has a substrate adhesion energy lower than that of typical van der Waals interactions between layered materials. Our results suggest that graphene on Ge can serve as an ideal material platform to be integrated with other material systems by a clean assembly process.