• 文献标题:   Preparation of few-layer graphene on on-axis 4H-SiC (000(1)over-bar) substrates using a modified SiC-stacked method
  • 文献类型:   Article
  • 作  者:   HU YF, ZHANG YM, GUO H, CHONG LY, ZHANG YM
  • 作者关键词:   carbon material, epitaxial growth, modified sicstacked cap, raman
  • 出版物名称:   MATERIALS LETTERS
  • ISSN:   0167-577X EI 1873-4979
  • 通讯作者地址:   Xidian Univ
  • 被引频次:   2
  • DOI:   10.1016/j.matlet.2015.10.116
  • 出版年:   2016

▎ 摘  要

Large area graphene films have been successfully grown on on-axis 4H-SiC (000 (1) over bar) by adding a modified SiC cap. Both the morphology and crystalline quality of modified SiC-stacked epitaxial graphene were investigated. The results reveal that domains of modified SiC-stacked epitaxial graphene are much larger, while the corresponding terraces are much more orderly than those formed by traditional face-to-face method (a SiC wafer used as the cap). It is also shown that the process of modified SiC-stacked thermal decomposition is more controllable and the modified SiC-stacked epitaxial graphene is of high quality. This could provide a method to fabricate wafer-sized high-quality graphene films. (C) 2015 Elsevier B.V. All rights reserved.