▎ 摘　　要

In this study, a nanostructure of graphene oxide films was deposited on the surface of silicon oxide to form a hybrid heterojunction diode. The characteristics of dielectric were studied in a wide range of frequencies under the influence of temperature in the range from 223 K to 363 K. The results showed lower and nearly constant values of the dielectric at high frequencies which can be understood under the conception of the inability of the dipole to rotate itself under the influence of high frequency. Moreover, the recorded large capacitance at low frequencies was attributed to the excess capacity value caused by the formed oxide layer. Also, the electrical properties in the dark and under the influence of light illumination were studied in a wide range of temperatures from 303 K to 448 K. The hybrid heterojunction diode exhibited a high rectification ratio at high voltage bias. The extracted series and shunt resistances showed a decrease with increasing temperature, which meant that the characteristics of the device enhanced at a higher temperature. The device also showed a remarkable light sensitivity and the transient photocurrent was detected, confirming the validity of the prepared device for photodiode applications.