• 文献标题:   Spatial confinement model applied to phonons in disordered graphene-based carbons
  • 文献类型:   Article
  • 作  者:   PUECH P, PLEWA JM, MALLETLADEIRA P, MONTHIOUX M
  • 作者关键词:  
  • 出版物名称:   CARBON
  • ISSN:   0008-6223 EI 1873-3891
  • 通讯作者地址:   Univ Toulouse
  • 被引频次:   3
  • DOI:   10.1016/j.carbon.2016.04.048
  • 出版年:   2016

▎ 摘  要

Analyzing the various bands in Raman spectra, mostly the G (optical carbonecarbon mode) and D (defect-related double resonance process) bands, is powerful at characterizing defects in disordered graphene-based carbons. The crystallite size L-a could be estimated from the I-D/I-G (intensity) or A(D)/A(G) (area) ratio, but with large uncertainties. Using the spatial confinement model (SCM) of the phonons has fully explained the linewidth variation for the D band, but could not explain the linewidth variation for the G band over the whole L-a range. Indeed, if the latter for large, Bernal-stacked graphenes is due to the Kohn anomaly and can be explained considering phonon dispersion curves, turbostratically-stacked graphenes with small L-a generate an additional broadening of the G band not accounted by the phonon-related SCM only. The realistic SCM proposed here explains the way the G band shape is related to L-a. The model was also validated by successfully duplicating the evolution of the D (mostly related to the electronic band dispersion) and D' band linewidths with decreasing L-a down to 5 nm. The work aims to be a guide for future computational works on Raman spectra of graphene-based carbon materials. (C) 2016 Elsevier Ltd. All rights reserved.