▎ 摘　　要

This paper describes synthesis of graphene/poly(4-vinylphenol) (PVP) nanocomposite and deposition of thin film by electrohydrodynamic atomization (EHDA) for fabrication flexible resistive switching device. EHDA technique proved its viability for thin film deposition after surface morphology analyses by field emission scanning electron microscope (FESEM) and non-destructive 3D Nano-profilometry, as the deposited films were, devoid of abnormalities. The commercially available graphene micro-flakes were exfoliated and broken down to ultra-small (20 nm-200 nm) nano-flakes by ultra-sonication in presence of N-methyl-pyrrolidone (NMP). These graphene nanoflakes with PVP nanocomposite, were successfully deposited as thin films (thickness similar to 140 +/- 7 nm, R-a = 2.59 nm) on indium-tin-oxide (ITO) coated polyethylene terephthalate (PET) substrate. Transmittance data revealed that thin films are up to similar to 87% transparent in visible and NIR region. Resistive switching behaviour of graphene/PVP nanocomposite thin film was studied by using the nanocomposite as active layer in Ag/active layer/ITO sandwich structure. The resistive switching devices thus fabricated, showed characteristic OFF to ON (high resistance to low resistance) transition at low voltages, when operated between + 3 V. characterized at 10 nA compliance currents. The devices fabricated by this approach exhibited a stable room temperature, low power current-voltage hysteresis and well over 1 h retentivity, and Rorr/RoN 35:1. The device showed stable flexibility up to a minimum bending diameter of 1.8 cm. (C) 2015 Elsevier B.V. All rights reserved.