• 文献标题:   In-Plane Optical Absorption and Free Carrier Absorption in Graphene-on-Silicon Waveguides
  • 文献类型:   Article
  • 作  者:   CHENG ZZ, TSANG HK, WANG XM, XU K, XU JB
  • 作者关键词:   graphene, free carrier absorption, nonlinear optic, integrated optic, silicon on insulator soi technology, silicon photonic
  • 出版物名称:   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
  • ISSN:   1077-260X EI 1558-4542
  • 通讯作者地址:   Chinese Univ Hong Kong
  • 被引频次:   39
  • DOI:   10.1109/JSTQE.2013.2263115
  • 出版年:   2014

▎ 摘  要

We experimentally study the in-plane optical absorption and free carrier absorption (FCA) in graphene-on-silicon waveguides using a pump-probe measurement over microsecond timescales. The silicon waveguide is fabricated using complementary metal-oxide-semiconductor compatible processes, and directly covered by a graphene layer. Saturable absorption in the graphene is observed at the beginning of the pump pulse followed by an increase in absorption. The increase in absorption builds up over several microseconds, and is experimental evidence that free carriers generated by the pump absorption in graphene can transfer into silicon waveguides. The FCA in silicon waveguides eventually dominates the optical loss, which reaches similar to 9 dB, after several microseconds. All-optical modulations of the probe light are thus demonstrated. There is also a large thermally induced change in waveguide effective refractive index because of the optical absorption in the graphene.