• 文献标题:   Tunnel Current between Structural Elements of Thin Graphene/Nanotube Films
  • 文献类型:   Article
  • 作  者:   GLUKHOVA OE, SLEPCHENKOV MM, KOLESNICHENKO PA
  • 作者关键词:   graphene, nanotube, tunnel contact
  • 出版物名称:   PHYSICS OF THE SOLID STATE
  • ISSN:   1063-7834 EI 1090-6460
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1134/S1063783422010073 EA MAY 2022
  • 出版年:   2022

▎ 摘  要

On the basis of the constructed atomistic models of graphene/nanotube films with different numbers of nanotubes in supercells, in silico studies of the regularities of non-uniform density distribution, which determine the presence of an island structure in such films, are carried out. As a result of quantum molecular and dynamic simulation, it is established that thin tubes of sub-nanometer diameter are wrapped in graphene sheets, which makes them energetically steady and stable. Tunnel contacts between individual film fragments that are not covalently bonded are also studied, in particular, between graphene sheets with different topology of the contacting edges, zigzag and armchair, depending on the distance between them, and between tubes of various chiralities including (6,3), (4,4), (6,5), (12,6), and (16,0). It is found that the tunnel contacts of tubes with a semiconductor type of conductivity are characterized by the presence of voltage intervals with negative differential resistance in I-V characteristics. Such voltage intervals are not observed at all in tubes with a metallic character of conductivity. The new knowledge obtained is important for estimating the electrical conductivity of such films, two thirds of which are semiconductor tubes.