▎ 摘　　要

In order to modulate the transfer doping of quasi-free-standing monolayer graphene (QFMLG) formed on SiC(0001), Ge atoms were intercalated additionally into QFMLG already formed by Sn intercalation between ZL and 6H-SiC(0001). By postannealing the Ge-deposited surface at 600 degrees C, the Sn1-xGex film with the 4 x 3 root 3 structure, composed of a bilayer and adatoms with dangling bonds under QFMLG, has been formed. It turns out that, in this Sn1-xGex film, Ge atoms preferentially occupy the bottom layer bound to the top Si atoms of the substrate, while Sn atoms occupy the top adatom sites. Strong correlation among the electrons localized at these adatom sites induces a semiconducting alloy film. As the postannealing temperature is increased up to 800 degrees C, the concentration of Ge in the intercalated film of the same 4 x 3 root 3 structure is gradually increased and the Dirac point also shifts gradually from -0.16 eV to +0.20 eV relative to the Fermi level. Such a result confirms that the transfer doping of QFMLG on SiC(0001) has been modulated by varying the alloy composition of the Sn1-xGex interfacial film. (C) 2019 Elsevier Ltd. All rights reserved.