▎ 摘　　要

Inrecent years, many reports have demonstrated the high potentialfor multilayer graphene in semiconductor fabrication. As interconnectswithin semiconductors or electrodes for two-dimensional transistors,the preparation of large-area multilayer graphene is becoming increasinglyimportant. Herein, we report a method for growing large-area multilayergraphene, which can achieve rapid heating and cooling. With the useof a high carbon concentration source, the preparation of multilayergraphene can be completed in a few seconds. This manufacturing methodhas the advantage of producing graphene with high quality, uniformity,and electrical conductivity. In commercial applications, this technologyhas great potential for the mass production and rapid fabricationof multilayer graphene. In addition, we found that the multilayergraphene produced by this method had cobalt atoms doped into the multilayergraphene during the process, resulting in its low resistivity. Combinedwith our intercalation technology, intercalated FeCl3 inthe graphene interlayer can reduce the resistivity of graphene to3.55 mu omega cm, which is very close to the resistivity ofcopper bulk. This result makes multilayer graphene more promisingfor various applications.