▎ 摘　　要

A high-performance resistive random access memory with graphene top and bottom electrodes and TiOx/Al2O3/TiO2 dielectric stacks is reported. The devices exhibit forming-free switching with stable operation at sub-mu A operating current. The switching is highly nonlinear with rectifying characteristics in the sub-mu A regime. As a result, the reset current is orders of magnitude smaller than the current compliance. Due to the increasing nonlinearity with decreasing current compliance, the reset current is similar to 100 pA or less for the current compliance of 180 nA. Overall, the devices demonstrate sub-mu A operating current, sub-nW reset power, ON/OFF ratio of similar to 10(4), stable dc endurance for more than 200 dc cycles, and stable retention up to 10(4) s. The rectifying characteristic offers potential to reduce sneak-currents in cross-bar architectures.