▎ 摘　　要

SnS2 exhibits a high absorbance coefficient and strong photoconductive properties in ultraviolet-visible regions, making it a promising photodetector with excellent photoelectric performance. The characteristic of a large yield of photocarriers in SnS2 with the high mobility of graphene is combined and a vertical graphene/SnS2 van der Waals heterostructure photodetector is fabricated, which can obtain effective electron-hole pairs separation under the built-in electric field, thus having a high photoresponse. It has the characteristics of ultrahigh responsivity (6.35 x 10(5) A W-1) and high external quantum efficiency (2.15 x 10(8)%) under 365 nm light. Such high-performance graphene/SnS2 heterostructures may find promising applications in future optoelectronic devices.