▎ 摘　　要

Graphene-based Y-junction (G-YJ) on a silicon substrate is demonstrated here, which gives nonlinear rectification for an electrical signal as well as temperature gradient inputs. The device exhibits room temperature responsivity and noise equivalent power of 36.34 mV/mW and 0.39 nW/Hz(1/2), respectively, up to the cut-off frequency of 0.637 THz at an applied gate voltage of 5 V. Whereas the voltage rectification efficiency is found to be around 5.4%. In addition, the proposed G-YJ also exhibits at output a thermo-voltage of 1.6 mV, where a temperature gradient of 140 K is applied between the input terminals and keeping back-gate at 2.5 V. Further, the observed rectifications are estimated by an analytical modeling.