▎ 摘　　要

The nanocomposites of zinc oxide/graphene oxide (ZnO-GO) were synthesized to fabricate the photodiodes. The ZnO-GO/p-Si and ZnO-GO/n-Si diodes were prepared for various GO contents. The electrical characteristics of the ZnO-GO/p-Si and ZnO-GO/n-Si diodes were analyzed under dark and light illuminations. The photocurrent of ZnO-GO/p-Si and ZnO-GO/n-Si diodes increases with increasing GO content. The ZnO-GO/p-Si diode having 0.03 M ratio of GO:ZnO exhibited the highest photoresponsivity with 0.5 A/W under 100 mW/cm(2). It is evaluated that ZnO-GO composites can be used in fabrication of high photosensitivity diodes. (C) 2015 Elsevier B.V. All rights reserved.