▎ 摘　　要

We compare the threshold voltage and subthreshold-slope characteristics as measures of short-channel effects (SCEs) for graphene-channel field-effect transistors (GFETs) with wide bilayer armchair-graphene film with those for ultrathin-body silicon-on-insulator (UTB-SOI) MOSFETs using a drift-diffusion-based device simulator. The intrinsic delay times for GFETs are also compared with those for UTB-SOI MOSFETs. (c) 2009 The Japan Society of Applied Physics