• 文献标题:   Subharmonic Gap Structure of Normal-State Conductance and Thermoelectric Effect in a Graphene-Based Nano Device
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   PARK KS, PARK J, YI KS
  • 作者关键词:   supercurrent, subharmonic gap, nano transistor, finitesized graphene, dirac fermion, josephson effect, conductance
  • 出版物名称:   JOURNAL OF NANOSCIENCE NANOTECHNOLOGY
  • ISSN:   1533-4880 EI 1533-4899
  • 通讯作者地址:   Pusan Natl Univ
  • 被引频次:   5
  • DOI:   10.1166/jnn.2008.IC64
  • 出版年:   2008

▎ 摘  要

Using the quantum transport of chiral Dirac fermions in graphene, we investigate the normal-state conductance and thermoelectric effect of a nano device under the ballistic superconductorgraphene-superconductor (SGS) model. Because of the Josephson effect and Andreev reflections, there exists an oscillatory behavior of the normal-state conductance flowing through the successive discrete energy levels on a finite-sized graphene contacted to the superconducting leads. The normal-state conductance displays a rich structure of subharmonic gaps controlled by means of a gate voltage on the discrete energy levels near the Fermi energy. Since the Fermi energy is an essential factor in determining the nature of conduction such as n or p type, we study the thermoelectric effect over the graphene-based nano device. It is shown that the thermoelectric effect can provide information on the location of the Fermi energy with respect to the energy levels of the finite-sized graphene.