• 文献标题:   Electronic states in hybrid boron nitride and graphene structures
  • 文献类型:   Article
  • 作  者:   ZHAO M, HUANG YH, MA F, HU TW, XU KW, CHU PK
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-8979 EI 1089-7550
  • 通讯作者地址:   Xi An Jiao Tong Univ
  • 被引频次:   12
  • DOI:   10.1063/1.4817883
  • 出版年:   2013

▎ 摘  要

The energy bands and electronic states of hybrid boron nitride (BN) and graphene structures are studied by first principle calculations. The electronic states change from semi-metallic to insulating depending on the number of B and N atoms as well as domain symmetry. When there are unequal numbers of B and N atoms, mid-gap states usually appear around the Fermi level and the corresponding hybrid structure possesses magnetic and semi-metallic properties. However, when the numbers of B and N atoms are equal, a band gap exists indicative of a semiconducting or insulating nature which depends on the structural symmetry. (C) 2013 AIP Publishing LLC.