▎ 摘　　要

Within the framework of a simple model, we investigated the Berry phase of epitaxial graphene (EG) formed on a semiconductor substrate. We have shown that this value is equal to pi near the Dirac point. This result is in complete agreement with the experimental data. We have shown that the Berry phase of epitaxial graphene may differ from pi far away from Dirac point. In addition, we investigated the Landau levels (LLs) in the epitaxial graphene within the framework of the semiclassical approach.