▎ 摘　　要

The discovery of graphene has generated enormous interest among scientists in various disciplines. A strong focus of graphene research addresses graphene's carrier physics and its interactions with light. Having an ultra-high carrier mobility and a linear dispersion band structure, graphene has been predicted and confirmed as a great candidate for optoelectrical applications. However, adding a bandgap to graphene has become an increasing need in order to extend graphene's potential. The synthesis of graphene quantum structures, such as graphene quantum dots, has become a popular topic in recent years, making the use of graphene more versatile. A bandgap in graphene quantum dots exists due to quantum confinement and edge effects. Such a bandgap modifies graphene's carrier behaviors, and can lead to versatile applications in optoelectronics. This article provides a review on the physical properties of graphene and graphene quantum dots, as well as on their applications towards photodection, photovoltaics, light-emitting diodes (LEDs) and plasmonics. (C) 2015 Elsevier Ltd. All rights reserved.