• 文献标题:   Transparent, Low-Power Pressure Sensor Matrix Based on Coplanar-Gate Graphene Transistors
  • 文献类型:   Article
  • 作  者:   SUN Q, KIM DH, PARK SS, LEE NY, ZHANG Y, LEE JH, CHO K, CHO JH
  • 作者关键词:  
  • 出版物名称:   ADVANCED MATERIALS
  • ISSN:   0935-9648 EI 1521-4095
  • 通讯作者地址:   Sungkyunkwan Univ
  • 被引频次:   105
  • DOI:   10.1002/adma.201400918
  • 出版年:   2014

▎ 摘  要

A novel device architecture for preparing a transparent and low-voltage graphene pressure-sensor matrix on plastic and rubber substrates is demonstrated. The coplanar gate configuration of the graphene transistor enables a simplified procedure. The resulting devices exhibit excellent device performance, including a high transparency of ca. 80% in the visible range, a low operating voltage less than 2 V, a high pressure sensitivity of 0.12 kPa(-1), and excellent mechanical durability over 2500 cycles.